| PART |
Description |
Maker |
| 2SC3906K 2SC4102 2SC2389S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
High-voltage Amplifier Transistor(120V 50mA)
Transistors
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SOT-23VAR
High-voltage Amplifier Transistor(120V/ 50mA)
High-voltage Amplifier Transistor(120V, 50mA) 高电压放大器晶体管（120伏特0mA的）
|
Toshiba Semiconductor
ROHM[Rohm]
Rohm Co., Ltd.
|
| LB1231 LB1233 LB1232 LB1234 |
High-Voltage, Large Current Darligton Transistor Array
High-Voltage, High- Current Darlington Transistor Array
PERIPHERAL DRIVER,7 DRIVER,BIPOLAR,DIP,16PIN,PLASTIC
Septuple Peripheral Driver
From old datasheet system
High-Voltage / High- Current Darlington Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
Sanyo Electric Co.,Ltd.
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MMBTA92 SMBTA92 SMBTA92/MMBTA92 |
High Voltage Transistors - SOT23 PNP High Voltage Transistor
PNP Silicon High Voltage Transistor
|
INFINEON[Infineon Technologies AG]
|
| DVRHV4.7200 DVRHV4.7400 DVRHV10200 DVRHV3.3400 DVR |
SURFACE MOUNT HIGH VOLTAGE SMD ELECTROLYTIC - 105C DVJRHV
HIGH VOLTAGE SMD ELECTROLYTIC - 105°C
|
Dubilier
|
| 2SC4615 2SA1772 2SA1772ETP-FA |
1000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Epitaxial Planar Silicon Transistor for High-Voltage Driver Applications(高电压驱动器应用的PNP硅外延平面型晶体 进步党硅外延平面晶体管的高压驱动器应用（高电压驱动器应用的新进步党硅外延平面型晶体管
NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications
PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications
|
Sanyo Electric Co., Ltd.
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4493 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
